SERIAL RESISTANCE OF PHOTOCONVERTERS SNO2/PCDTE, ITO/PCDTE И IN2O3/PCDTE BASED ON CADMIUM TELLURIDE

  • Sh. Utamuradova Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan
  • S. Muzafarova Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan
DOI: https://doi.org/10.31618/ESU.2413-9335.2021.1.93.1550
Keywords: Dielectric layer, series resistance, output parameters photoconverter, structure

Abstract

The operational parameters and efficiency of the SnO2 / pCdTe, ITO / pCdTe and In2O3 / pCdTe photoconverters have been investigated. The real values of the series resistance of the structures under study have been determined. In film photoconverters, a significant contribution to the series resistance is made by the resistance of the transition dielectric layer of tellurium oxide TeO2 between the semiconductor and the resistance between the rear ohmic contact of the structures.

Author Biographies

Sh. Utamuradova , Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan

Doctor of Physical and Mathematical Sciences (DSc), Professor,Director

S. Muzafarova , Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan

Ph.D.

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Published
2022-01-24
How to Cite
Utamuradova , Sh., and S. Muzafarova. 2022. “SERIAL RESISTANCE OF PHOTOCONVERTERS SNO2/PCDTE, ITO/PCDTE И IN2O3/PCDTE BASED ON CADMIUM TELLURIDE ”. EurasianUnionScientists, January, 61-66. https://doi.org/10.31618/ESU.2413-9335.2021.1.93.1550.
Issue
EURASIAN UNION OF SCIENTISTS. SERIES: TECHNICAL AND PHYSICAL AND MATHEMATICAL SCIENCES. VOLUME 1 №12 (93) (2021)
Section
Article

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